Daniele Ielmini

Education

Laurea in Nuclear Engineering (1995)

PhD in Nuclear Engineering (2000)

Research interest

I am interested in nanoelectronic devices and their modeling. My current activities are aimed at the physics-based modeling of novel devices for nonvolatile memories, including phase change memory (PCM), resistive switching memory (RRAM) and conductive-bridge memory (CBRAM). The purpose of my research is to unveil the intimate interplay between electrical, thermal and nanoionic phenomena responsible for the memory operation, thus paving the way for the development of a new class of memory/logic devices based on resistive change.

Thesis/PhD/postdoc open positions

Thesis, PhD and postdoc positions are available on nanodevice characterization and modeling. Current activities include (i) modeling of phase transition and transport in PCM devices, (ii) time-resolved (ns-ms) characterization and modeling of nanofilament growth/dissolution in metal oxide RRAM, and (iii) sub-mA write/erase of ionic channels in CBRAM.

Available Thesis positions can be found here. For PhD or postdoc openings, send an email.

CV

2000-2002 – Research Associate, Dipartimento di Elettronica e Informazione, Politecnico di Milano

2002-2010 – Assistant Professor, Dipartimento di Elettronica e Informazione, Politecnico di Milano

2010-today – Associate Professor, Dipartimento di Elettronica e Informazione, Politecnico di Milano

For a full CV, see here.

Courses

Elettronica dello Stato Solido (085999)

NonVolatile Memories (087984)